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REMINDER: Silicon Frontline Showcases Software to Improve Semiconductor Power Device Reliability and Efficiency at International Symposium on Power Semiconductor Devices and ICsJune 4-7, 2012, Bruges, Belgium (June 05, 2012)
BRUGES, BELGIUM -- (Marketwire) -- 06/05/12 --
Silicon Frontline Technology, Inc. (SFT) an EDA company, in the 3D parasitic extraction and analysis software market, is exhibiting at the International Symposium on Power Semiconductor Devices and ICs (ISPSD) and showing products that improve semiconductor power device reliability and efficiency: F3D (Fast 3D) for fast 3D extraction and R3D (Resistive 3D) for 3D extraction and analysis of large resistive structures and P2P (Pont-to-Point) for IR drop analysis.
Monday-Thursday, June 4-7, 2012. 9 am to 4:30 pm
Oud Sint-Jan Conference Centre
About Silicon Frontline's Products
F3D is chosen for its nanometer and A/MS design verification accuracy.
R3D is used for analysis that improves the reliability and efficiency of semiconductor power devices. R3D has been adopted by over 20 customers and applied to MOS, DMOS, LDMOS, vertical DMOS, waffle-style and GaN HEMT designs.
P2P delivers point-to-point or multipoint-to-multipoint resistance analysis and fast, static IR drop analysis.
About Silicon Frontline
Silicon Frontline Technology, Inc. provides parasitic extraction and analysis software for post-layout verification that is Guaranteed Accurate and works with existing design flows from major EDA vendors. Using new 3D technology, the company's software products improve silicon quality for standard and advanced nanometer processes. For more information please visit www.siliconfrontline.com. For sales or general assistance, please email [email protected].
Notes to editors:
Acronyms and Definitions
A/MS: Analog Mixed Signal
DMOS: Double-diffused Metal Oxide Semiconductor
EDA: Electronic Design Automation
F3D: Fast 3D
GaN: Gallium Nitride
HEMT: High Electron Mobility Transistor
IR Drop Voltage Drop Analysis
LDMOS: Laterally Diffused Metal Oxide Semiconductor
MOS: Metal Oxide Semiconductor
R3D: Resistive 3D
Rdson: Resistance from drain to source
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Related Keywords: 3D parasitic extraction, power device, EDA, semiconductor, sensors, memory, ISPSD, Rdson, IR drop, R3D, F3D, Marketwire, Inc., Email,